| Anzahl | Preis |
|---|---|
| 1+ | 7.16 EUR |
| 10+ | 4.75 EUR |
| 100+ | 3.38 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.97 EUR |
| 2500+ | 2.89 EUR |
| 5000+ | 2.68 EUR |
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Technische Details ISC011N06LM5ATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 288A, Power dissipation: 188W, Case: PG-TDSON-8, On-state resistance: 1.15mΩ, Mounting: SMD, Gate charge: 63nC, Kind of channel: enhancement.
Weitere Produktangebote ISC011N06LM5ATMA1 nach Preis ab 3.11 EUR bis 7.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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ISC011N06LM5ATMA1 | Infineon Technologies |
 Description: TRENCH 40<-<100V PG-TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 288A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 116µA Supplier Device Package: PG-TDSON-8-17 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC011N06LM5ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 288A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 116µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: TRENCH 40<-<100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 288A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 116µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.57 EUR |
| 10+ | 5.01 EUR |
| 100+ | 3.56 EUR |
| 500+ | 3.11 EUR |