ISC015N06NM5LF2ATMA1 Infineon Technologies

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Hersteller: Infineon Technologies
MOSFET

auf Bestellung 4930 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
1+	5.74 EUR
10+	4.8 EUR
25+	4.56 EUR
100+	3.89 EUR
250+	3.68 EUR
500+	3.47 EUR
1000+	2.96 EUR

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Technische Details ISC015N06NM5LF2ATMA1 Infineon Technologies

Weitere Produktangebote ISC015N06NM5LF2ATMA1

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	ISC015N06NM5LF2ATMA1	Hersteller : Infineon Technologies	Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.45V @ 120µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V	Produkt ist nicht verfügbar	kaufen
	ISC015N06NM5LF2ATMA1	Hersteller : Infineon Technologies	Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 3.45V @ 120µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V	Produkt ist nicht verfügbar	kaufen