ISC017N04NM5ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 193A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 60µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V.