ISC0603NLSATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.15 EUR |
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Technische Details ISC0603NLSATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 24µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V.
Weitere Produktangebote ISC0603NLSATMA1 nach Preis ab 1.21 EUR bis 3.24 EUR
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ISC0603NLSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 12.3A/56A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 24µA Supplier Device Package: PG-TDSON-8-6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V |
auf Bestellung 6987 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC0603NLSATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH 40<-<100V |
auf Bestellung 3351 Stücke: Lieferzeit 10-14 Tag (e) |
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