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ISC073N12LM6ATMA1

ISC073N12LM6ATMA1 Infineon Technologies

Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378 Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+2.05 EUR
Mindestbestellmenge: 5000
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Technische Details ISC073N12LM6ATMA1 Infineon Technologies

Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V, Power Dissipation (Max): 3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 50µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V.

Weitere Produktangebote ISC073N12LM6ATMA1 nach Preis ab 2.14 EUR bis 4.44 EUR

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Preis ohne MwSt
ISC073N12LM6ATMA1 ISC073N12LM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC073N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a53ca5378 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
auf Bestellung 9066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.38 EUR
10+ 3.69 EUR
100+ 2.99 EUR
500+ 2.65 EUR
1000+ 2.27 EUR
2000+ 2.14 EUR
Mindestbestellmenge: 5
ISC073N12LM6ATMA1 ISC073N12LM6ATMA1 Hersteller : Infineon Technologies Infineon_ISC073N12LM6_DataSheet_v02_00_EN-3084374.pdf MOSFET TRENCH >=100V
auf Bestellung 5891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.44 EUR
10+ 3.73 EUR
25+ 3.52 EUR
100+ 3.01 EUR
250+ 2.85 EUR
500+ 2.69 EUR
1000+ 2.29 EUR
ISC073N12LM6ATMA1 Hersteller : Infineon Technologies infineon-isc073n12lm6-datasheet-v02_00-en.pdf Trans MOSFET N-CH 120V 13.4A 8-Pin TDSON EP T/R
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