ISC0804NLSATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 12A/59A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 59A (Tc), Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 28µA, Supplier Device Package: PG-TDSON-8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V.