| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 1.67 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.15 EUR |
| 2500+ | 1.14 EUR |
| 5000+ | 0.9 EUR |
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Technische Details ISC088N08NM6ATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET, Type of transistor: N-MOSFET.
Weitere Produktangebote ISC088N08NM6ATMA1 nach Preis ab 1.29 EUR bis 3.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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ISC088N08NM6ATMA1 | Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 23µA Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V |
auf Bestellung 4890 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC088N08NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
auf Bestellung 4890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 10+ | 2.43 EUR |
| 50+ | 1.82 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.29 EUR |