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ISC165N15NM6ATMA1

ISC165N15NM6ATMA1 Infineon Technologies

DS_ISC165N15NM6_en.pdf Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 4034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.27 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 5
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Technische Details ISC165N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V, Power Dissipation (Max): 3W (Ta), 95W (Tc), Vgs(th) (Max) @ Id: 4V @ 35µA, Supplier Device Package: PG-TDSON-8-45, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V.

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ISC165N15NM6ATMA1 ISC165N15NM6ATMA1 Hersteller : Infineon Technologies Infineon_ISC165N15NM6_DataSheet_v01_00_EN.pdf MOSFETs OptiMOS 6 power MOSFET 150 V normal level in SuperSO8 package
auf Bestellung 3935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.61 EUR
10+2.32 EUR
100+1.59 EUR
500+1.26 EUR
1000+1.2 EUR
2500+1.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC165N15NM6ATMA1 ISC165N15NM6ATMA1 Hersteller : Infineon Technologies DS_ISC165N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
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Im Einkaufswagen  Stück im Wert von  UAH