| Anzahl | Preis |
|---|---|
| 1+ | 4.35 EUR |
| 10+ | 2.85 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.59 EUR |
| 2500+ | 1.54 EUR |
| 5000+ | 1.38 EUR |
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Technische Details ISC240P06LMATMA1 Infineon Technologies
Description: MOSFET P-CH 60V 59A TDSON-8 FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V, Power Dissipation (Max): 188W (Ta), Vgs(th) (Max) @ Id: 2V @ 2.34A, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V.
Weitere Produktangebote ISC240P06LMATMA1 nach Preis ab 1.6 EUR bis 4.65 EUR
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ISC240P06LMATMA1 | Infineon Technologies |
 Description: MOSFET P-CH 60V 59A TDSON-8 FLPackaging: Cut Tape (CT) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V Power Dissipation (Max): 188W (Ta) Vgs(th) (Max) @ Id: 2V @ 2.34A Supplier Device Package: PG-TDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
auf Bestellung 4256 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC240P06LMATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 59A TDSON-8 FL
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 188W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.34A
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Description: MOSFET P-CH 60V 59A TDSON-8 FL
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 188W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2.34A
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 4256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.65 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.6 EUR |