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ISC300N20NM6ATMA1

ISC300N20NM6ATMA1 Infineon Technologies

infineon-isc300n20nm6-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: ISC300N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.39 EUR
100+2.35 EUR
500+1.91 EUR
1000+1.87 EUR
Mindestbestellmenge: 4
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Technische Details ISC300N20NM6ATMA1 Infineon Technologies

Description: ISC300N20NM6ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 56µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V.

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ISC300N20NM6ATMA1 ISC300N20NM6ATMA1 Hersteller : Infineon Technologies Infineon_8-29-2025_ISC300N20NM6ATMA1.pdf MOSFETs OptiMOS 6 Power-Transistor, 200 V
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.26 EUR
10+3.43 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.9 EUR
2500+1.83 EUR
5000+1.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC300N20NM6ATMA1 ISC300N20NM6ATMA1 Hersteller : Infineon Technologies infineon-isc300n20nm6-datasheet-en.pdf Description: ISC300N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
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Im Einkaufswagen  Stück im Wert von  UAH