ISCH69N04NM7VATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 4.51 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.61 EUR |
| 2500+ | 1.59 EUR |
| 5000+ | 1.51 EUR |
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Technische Details ISCH69N04NM7VATMA1 Infineon Technologies
Description: ISCH69N04NM7VATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 3.15V @ 82µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V.
Weitere Produktangebote ISCH69N04NM7VATMA1 nach Preis ab 1.6 EUR bis 4.63 EUR
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ISCH69N04NM7VATMA1 | Infineon Technologies |
 Description: ISCH69N04NM7VATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.15V @ 82µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V |
auf Bestellung 4006 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISCH69N04NM7VATMA1 |
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Hersteller: Infineon Technologies
Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
auf Bestellung 4006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 3 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.6 EUR |