Technische Details ISL6613AECB INTERSIL
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 1.25A, 2A, Gate Type: N-Channel MOSFET, Rise / Fall Time (Typ): 26ns, 18ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 36 V, Input Type: Non-Inverting, Voltage - Supply: 10.8V ~ 13.2V, Operating Temperature: 0°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tube, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous.
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ISL6613AECB | Hersteller : Renesas Electronics Corporation |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICDigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.25A, 2A Gate Type: N-Channel MOSFET Rise / Fall Time (Typ): 26ns, 18ns Supplier Device Package: 8-SOIC-EP High Side Voltage - Max (Bootstrap): 36 V Input Type: Non-Inverting Voltage - Supply: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tube Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous |
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