ISL6613AECBZ Intersil
Hersteller: IntersilDescription: HALF BRIDGE BASED MOSFET DRIVER
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36 V
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 26ns, 18ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 1.25A, 2A
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 124+ | 3.99 EUR |
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Technische Details ISL6613AECBZ Intersil
Description: HALF BRIDGE BASED MOSFET DRIVER, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 0°C ~ 125°C (TJ), Voltage - Supply: 10.8V ~ 13.2V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 36 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 26ns, 18ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1.25A, 2A, DigiKey Programmable: Not Verified.
Weitere Produktangebote ISL6613AECBZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ISL6613AECBZ | Hersteller : Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 10.8V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36 V Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 26ns, 18ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1.25A, 2A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |