ISL6613IB Intersil
Hersteller: Intersil
Description: HALF BRIDGE BASED MOSFET DRIVER
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 26ns, 18ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 1.25A, 2A
DigiKey Programmable: Not Verified
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Technische Details ISL6613IB Intersil
Description: HALF BRIDGE BASED MOSFET DRIVER, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 10.8V ~ 13.2V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 36 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 26ns, 18ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1.25A, 2A, DigiKey Programmable: Not Verified.
Weitere Produktangebote ISL6613IB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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ISL6613IB | Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 26ns, 18ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 36 V Input Type: Non-Inverting Voltage - Supply: 10.8V ~ 13.2V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.25A, 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ISL6613IB |
|
Hersteller: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 36 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 36 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH