
ISL89164FBEAZ Renesas / Intersil
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 7.76 EUR |
10+ | 6.6 EUR |
100+ | 5.72 EUR |
250+ | 5.42 EUR |
500+ | 4.86 EUR |
980+ | 3.87 EUR |
5880+ | 3.85 EUR |
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Technische Details ISL89164FBEAZ Renesas / Intersil
Category: MOSFET/IGBT drivers, Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A, Kind of package: tube, Type of integrated circuit: driver, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Kind of output: non-inverting, Mounting: SMD, Case: SO8-EP, Protection: undervoltage UVP, Operating temperature: -40...125°C, Output current: -6...6A, Impulse rise time: 40ns, Pulse fall time: 40ns, Number of channels: 2, Supply voltage: 4.5...16V DC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ISL89164FBEAZ nach Preis ab 4.9 EUR bis 8.24 EUR
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ISL89164FBEAZ | Hersteller : Renesas Electronics America Inc |
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auf Bestellung 2635 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL89164FBEAZ | Hersteller : RENESAS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Kind of output: non-inverting Mounting: SMD Case: SO8-EP Protection: undervoltage UVP Operating temperature: -40...125°C Output current: -6...6A Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Supply voltage: 4.5...16V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ISL89164FBEAZ | Hersteller : RENESAS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Kind of output: non-inverting Mounting: SMD Case: SO8-EP Protection: undervoltage UVP Operating temperature: -40...125°C Output current: -6...6A Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Supply voltage: 4.5...16V DC |
Produkt ist nicht verfügbar |