ISL89165FBEBZ Renesas Electronics America Inc
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.24 EUR |
| 10+ | 7.4 EUR |
| 25+ | 7 EUR |
| 100+ | 6.07 EUR |
| 250+ | 5.76 EUR |
| 500+ | 5.17 EUR |
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Technische Details ISL89165FBEBZ Renesas Electronics America Inc
Category: MOSFET/IGBT drivers, Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A, Kind of package: tube, Type of integrated circuit: driver, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Kind of output: non-inverting, Mounting: SMD, Case: SO8-EP, Protection: undervoltage UVP, Operating temperature: -40...125°C, Output current: -6...6A, Impulse rise time: 40ns, Pulse fall time: 40ns, Number of channels: 2, Supply voltage: 4.5...16V DC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ISL89165FBEBZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| ISL89165FBEBZ | Hersteller : Intersil |
 SOIC 8/A°/High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable Inp ISL89165SOAnzahl je Verpackung: 98 Stücke |
Produkt ist nicht verfügbar |
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| ISL89165FBEBZ | Hersteller : RENESAS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Kind of output: non-inverting Mounting: SMD Case: SO8-EP Protection: undervoltage UVP Operating temperature: -40...125°C Output current: -6...6A Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Supply voltage: 4.5...16V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ISL89165FBEBZ | Hersteller : Renesas / Intersil |
Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD EP |
Produkt ist nicht verfügbar |
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| ISL89165FBEBZ | Hersteller : RENESAS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Kind of output: non-inverting Mounting: SMD Case: SO8-EP Protection: undervoltage UVP Operating temperature: -40...125°C Output current: -6...6A Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Supply voltage: 4.5...16V DC |
Produkt ist nicht verfügbar |