ISL9R8120S3ST onsemi
Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details ISL9R8120S3ST onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263 (D2Pak), Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 30pF @ 10V, 1MHz, Technology: Avalanche, Reverse Recovery Time (trr): 300 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote ISL9R8120S3ST
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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ISL9R8120S3ST | onsemi |
Description: DIODE GEN PURP 1.2KV 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Capacitance @ Vr, F: 30pF @ 10V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ISL9R8120S3ST |
|
Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH