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ISP650P06NMXTSA1 Infineon Technologies


Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+0.83 EUR
2000+0.77 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISP650P06NMXTSA1 Infineon Technologies

Description: MOSFET P-CH 60V 3.7A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V, Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.037mA, Supplier Device Package: PG-SOT223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V.

Weitere Produktangebote ISP650P06NMXTSA1 nach Preis ab 0.72 EUR bis 2.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
ISP650P06NMXTSA1 ISP650P06NMXTSA1 Infineon Technologies Infineon_ISP650P06NM_DS_v02_00_EN.pdf MOSFETs SMALL SIGNAL MOSFETS
auf Bestellung 2848 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.71 EUR
10+1.64 EUR
100+1.15 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.73 EUR
5000+0.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISP650P06NMXTSA1 ISP650P06NMXTSA1 Infineon Technologies Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280 Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 2679 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISP650P06NMXTSA1 Infineon_ISP650P06NM_DS_v02_00_EN.pdf
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL MOSFETS
auf Bestellung 2848 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.71 EUR
10+1.64 EUR
100+1.15 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.73 EUR
5000+0.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISP650P06NMXTSA1 Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 2679 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.71 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH