IST006N04NM6AUMA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IST006N04NM6AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 475 A, 0.0005 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 475A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.3V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 500µohm
SVHC: No SVHC (27-Jun-2018)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.62 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.57 EUR |
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Technische Details IST006N04NM6AUMA1 INFINEON
Description: INFINEON - IST006N04NM6AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 475 A, 0.0005 ohm, HSOF, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 475A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.3V, euEccn: NLR, Verlustleistung: 250W, Bauform - Transistor: HSOF, Anzahl der Pins: 5Pin(s), Produktpalette: OptiMOS 6, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 500µohm, SVHC: No SVHC (27-Jun-2018).
Weitere Produktangebote IST006N04NM6AUMA1 nach Preis ab 2.43 EUR bis 10.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IST006N04NM6AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 58A/475A HSOF-5 Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IST006N04NM6AUMA1 | INFINEON |
Description: INFINEON - IST006N04NM6AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 475 A, 0.0005 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 475A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 500µohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 1910 Stücke: Lieferzeit 14-21 Tag (e) |
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IST006N04NM6AUMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
auf Bestellung 4085 Stücke: Lieferzeit 10-14 Tag (e) |
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IST006N04NM6AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 58A/475A HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V |
auf Bestellung 3331 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 58A/475A HSOF-5
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Description: MOSFET N-CH 40V 58A/475A HSOF-5
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 3.37 EUR |
| IST006N04NM6AUMA1 |
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Hersteller: INFINEON
Description: INFINEON - IST006N04NM6AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 475 A, 0.0005 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 475A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.3V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 500µohm
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IST006N04NM6AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 475 A, 0.0005 ohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 475A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.3V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 500µohm
SVHC: No SVHC (27-Jun-2018)
auf Bestellung 1910 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 62+ | 4.05 EUR |
| 82+ | 2.86 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.57 EUR |
| IST006N04NM6AUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
auf Bestellung 4085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.02 EUR |
| 10+ | 4.57 EUR |
| 100+ | 3.2 EUR |
| 500+ | 2.92 EUR |
| 2000+ | 2.43 EUR |
| IST006N04NM6AUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 58A/475A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Description: MOSFET N-CH 40V 58A/475A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
auf Bestellung 3331 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.01 EUR |
| 10+ | 6.6 EUR |
| 100+ | 4.68 EUR |
| 500+ | 3.86 EUR |
| 1000+ | 3.58 EUR |