IST006N04NM6AUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 58A/475A HSOF-5
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Produktrezensionen
Produktbewertung abgeben
Technische Details IST006N04NM6AUMA1 Infineon Technologies
Description: MOSFET N-CH 40V 58A/475A HSOF-5, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-HSOF-5-4, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V.
Weitere Produktangebote IST006N04NM6AUMA1 nach Preis ab 2.04 EUR bis 5.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IST006N04NM6AUMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
auf Bestellung 4085 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
IST006N04NM6AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 58A/475A HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V |
auf Bestellung 4264 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IST006N04NM6AUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
auf Bestellung 4085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.22 EUR |
| 10+ | 3.84 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.45 EUR |
| 2000+ | 2.04 EUR |
| IST006N04NM6AUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 58A/475A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Description: MOSFET N-CH 40V 58A/475A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 475A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
auf Bestellung 4264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.88 EUR |
| 10+ | 3.86 EUR |
| 100+ | 2.71 EUR |
| 500+ | 2.41 EUR |