IST015N06NM5AUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 1806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.36 EUR |
| 10+ | 7.87 EUR |
| 100+ | 6.37 EUR |
| 500+ | 5.66 EUR |
| 1000+ | 4.85 EUR |
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Technische Details IST015N06NM5AUMA1 Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET 60 V, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 95µA, Supplier Device Package: PG-HSOF-5-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V.
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| IST015N06NM5AUMA1 | Hersteller : Infineon Technologies |
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IST015N06NM5AUMA1 | Hersteller : Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFET 60 V Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V |
Produkt ist nicht verfügbar |
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IST015N06NM5AUMA1 | Hersteller : Infineon Technologies |
MOSFET |
Produkt ist nicht verfügbar |