IST019N08NM5AUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRENCH 40<-<100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.71 EUR |
| 10+ | 5.83 EUR |
| 100+ | 4.17 EUR |
| 500+ | 3.47 EUR |
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Technische Details IST019N08NM5AUMA1 Infineon Technologies
Description: TRENCH 40.
Weitere Produktangebote IST019N08NM5AUMA1 nach Preis ab 3.41 EUR bis 8.06 EUR
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IST019N08NM5AUMA1 | Hersteller : Infineon Technologies |
MOSFETs N |
auf Bestellung 546 Stücke: Lieferzeit 10-14 Tag (e) |
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N-Channel MOSFET |
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IST019N08NM5AUMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 148µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V |
Produkt ist nicht verfügbar |