| Anzahl | Preis |
|---|---|
| 1+ | 6.53 EUR |
| 10+ | 4.35 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.64 EUR |
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Technische Details IST019N08NM5AUMA1 Infineon Technologies
MOSFETs IFX FET > 60-80V.
Weitere Produktangebote IST019N08NM5AUMA1 nach Preis ab 3.47 EUR bis 7.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IST019N08NM5AUMA1 | Infineon Technologies |
 Description: TRENCH 40<-<100V PG-HSOF-5Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3.8V @ 148µA Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 755 Stücke: Lieferzeit 10-14 Tag (e) |
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| IST019N08NM5AUMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-5
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Description: TRENCH 40<-<100V PG-HSOF-5
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.71 EUR |
| 10+ | 5.83 EUR |
| 100+ | 4.17 EUR |
| 500+ | 3.47 EUR |