ISZ023N06LM6ATMA1 Infineon Technologies
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.95 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.36 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.71 EUR |
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Technische Details ISZ023N06LM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 Power Transistor, 60 V.
Weitere Produktangebote ISZ023N06LM6ATMA1
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ISZ023N06LM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 38µA Supplier Device Package: PG-TSDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V |
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ISZ023N06LM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 38µA Supplier Device Package: PG-TSDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V |
Produkt ist nicht verfügbar |