ISZ025N06NM6ATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.96 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.52 EUR |
| 2500+ | 1.48 EUR |
| 5000+ | 1.34 EUR |
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Technische Details ISZ025N06NM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 Power Transistor, 60 V.
Weitere Produktangebote ISZ025N06NM6ATMA1 nach Preis ab 1.59 EUR bis 4.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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ISZ025N06NM6ATMA1 | Infineon Technologies |
 Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 38µA Supplier Device Package: PG-TSDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V |
auf Bestellung 3790 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ025N06NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 3790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.57 EUR |
| 10+ | 2.93 EUR |
| 50+ | 2.23 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.59 EUR |