| Anzahl | Preis |
|---|---|
| 2+ | 2.36 EUR |
| 10+ | 1.47 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.72 EUR |
| 5000+ | 0.62 EUR |
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Technische Details ISZ0703NLSATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 13A/56A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 15µA, Supplier Device Package: PG-TSDSON-8-25, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V.
Weitere Produktangebote ISZ0703NLSATMA1 nach Preis ab 0.66 EUR bis 2.41 EUR
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ISZ0703NLSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 60V 13A/56A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 15µA Supplier Device Package: PG-TSDSON-8-25 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V |
auf Bestellung 4846 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISZ0703NLSATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/56A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
Description: MOSFET N-CH 60V 13A/56A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 4846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 12+ | 1.52 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.72 EUR |
| 2000+ | 0.66 EUR |