| Anzahl | Preis |
|---|---|
| 1+ | 3.26 EUR |
| 10+ | 2.69 EUR |
| 100+ | 2.15 EUR |
| 250+ | 1.99 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.55 EUR |
| 2500+ | 1.47 EUR |
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Technische Details ISZ113N10NM5LFATMA1 Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TSDSON-8 FL, Vgs(th) (Max) @ Id: 3.9V @ 36µA, Power Dissipation (Max): 2.5W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote ISZ113N10NM5LFATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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ISZ113N10NM5LFATMA1 | Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TSDSON-8 FL Vgs(th) (Max) @ Id: 3.9V @ 36µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
ISZ113N10NM5LFATMA1 | Infineon Technologies |
Description: OPTIMOSTM5LINEARFET100V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TSDSON-8 FL Vgs(th) (Max) @ Id: 3.9V @ 36µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ISZ113N10NM5LFATMA1 |
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISZ113N10NM5LFATMA1 |
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH