| Anzahl | Preis |
|---|---|
| 2+ | 1.99 EUR |
| 10+ | 1.53 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.73 EUR |
| 5000+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ISZ24DP10LMATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A, Supplier Device Package: PG-TDSON-8-25, Drain to Source Voltage (Vdss): 100 V.
Weitere Produktangebote ISZ24DP10LMATMA1 nach Preis ab 0.67 EUR bis 2.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ISZ24DP10LMATMA1 | Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A Supplier Device Package: PG-TDSON-8-25 Drain to Source Voltage (Vdss): 100 V |
auf Bestellung 2691 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ISZ24DP10LMATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A
Supplier Device Package: PG-TDSON-8-25
Drain to Source Voltage (Vdss): 100 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A
Supplier Device Package: PG-TDSON-8-25
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 2691 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 12+ | 1.53 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |
| 2000+ | 0.67 EUR |