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ISZ56DP15LMATMA1

ISZ56DP15LMATMA1 Infineon Technologies

Infineon-ISZ56DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa000ffe36fc Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
13+1.37 EUR
100+1.06 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISZ56DP15LMATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 724µA, Supplier Device Package: PG-TSDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V.

Weitere Produktangebote ISZ56DP15LMATMA1 nach Preis ab 0.67 EUR bis 1.97 EUR

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ISZ56DP15LMATMA1 ISZ56DP15LMATMA1 Hersteller : Infineon Technologies Infineon_ISZ56DP15LM_DataSheet_v02_00_EN-3107525.pdf MOSFETs TRENCH >=100V
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.97 EUR
10+1.38 EUR
100+1.07 EUR
500+0.91 EUR
1000+0.74 EUR
2500+0.7 EUR
5000+0.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ISZ56DP15LMATMA1 ISZ56DP15LMATMA1 Hersteller : Infineon Technologies Infineon-ISZ56DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa000ffe36fc Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
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Im Einkaufswagen  Stück im Wert von  UAH