IXA55I1200HJ IXYS
Hersteller: IXYSDescription: IGBT PT 1200V 84A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.78 EUR |
| 30+ | 22.6 EUR |
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Technische Details IXA55I1200HJ IXYS
Description: IGBT PT 1200V 84A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Switching Energy: 4.5mJ (on), 5.5mJ (off), Test Condition: 600V, 50A, 15Ohm, 15V, Gate Charge: 190 nC, Part Status: Active, Current - Collector (Ic) (Max): 84 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 290 W.
Weitere Produktangebote IXA55I1200HJ nach Preis ab 28.53 EUR bis 28.53 EUR
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Preis | ||||
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Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™ Collector current: 54A Case: PLUS247™ Technology: GenX3™; Planar; XPT™ Power dissipation: 290W Kind of package: tube Gate charge: 0.19µC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Anzahl je Verpackung: 300 Stücke |
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Trans IGBT Chip N-CH 1200V 84A 290W 3-Pin(3+Tab) ISOPLUS 247 Tube |
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IXA55I1200HJ | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 54A; 290W; PLUS247™ Collector current: 54A Case: PLUS247™ Technology: GenX3™; Planar; XPT™ Power dissipation: 290W Kind of package: tube Gate charge: 0.19µC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |