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Technische Details IXBF42N300 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c, Type of transistor: IGBT, Technology: BiMOSFET™, Collector-emitter voltage: 3kV, Collector current: 24A, Power dissipation: 240W, Case: ISOPLUS i4-pac™ x024c, Gate-emitter voltage: ±20V, Pulsed collector current: 380A, Mounting: THT, Gate charge: 200nC, Kind of package: tube, Turn-on time: 652ns, Turn-off time: 950ns, Features of semiconductor devices: high voltage.
Weitere Produktangebote IXBF42N300
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IXBF42N300 | Hersteller : IXYS |
 MOSFETs ISOPLUS 3KV 24A DIODE |
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IXBF42N300 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 3kV Collector current: 24A Power dissipation: 240W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 652ns Turn-off time: 950ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |