IXBN75N170A IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Case: SOT227B
Pulsed collector current: 100A
Collector current: 42A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Application: for UPS; motors
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Case: SOT227B
Pulsed collector current: 100A
Collector current: 42A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Technology: BiMOSFET™
Max. off-state voltage: 1.7kV
Application: for UPS; motors
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 67.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXBN75N170A IXYS
Description: IGBT MOD 1700V 75A 625W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A, NTC Thermistor: No, Supplier Device Package: SOT-227B, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 625 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V.
Weitere Produktangebote IXBN75N170A nach Preis ab 67.67 EUR bis 67.67 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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IXBN75N170A | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B Case: SOT227B Pulsed collector current: 100A Collector current: 42A Gate-emitter voltage: ±20V Semiconductor structure: single transistor Technology: BiMOSFET™ Max. off-state voltage: 1.7kV Application: for UPS; motors Power dissipation: 500W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBN75N170A | Hersteller : Littelfuse | Trans IGBT Module N-CH 1700V |
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IXBN75N170A | Hersteller : Littelfuse | Trans IGBT Module N-CH 1700V |
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IXBN75N170A | Hersteller : IXYS |
Description: IGBT MOD 1700V 75A 625W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 625 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V |
Produkt ist nicht verfügbar |
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IXBN75N170A | Hersteller : IXYS | IGBT Transistors 75 Amps 1700V 6.00 Rds |
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