IXBT10N170 IXYS

Category: SMD IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268, Type of transistor: IGBT, Technology: BiMOSFET™, Power dissipation: 140W, Case: TO268, Mounting: SMD, Gate charge: 30nC, Kind of package: tube, Collector-emitter voltage: 1.7kV, Features of semiconductor devices: high voltage, Pulsed collector current: 40A, Turn-on time: 63ns, Turn-off time: 1.8µs, Gate-emitter voltage: ±20V, Collector current: 10A.