auf Bestellung 939 Stücke:
Lieferzeit 307-321 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 72.36 EUR |
| 10+ | 52.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXBT42N170 IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK, Type of transistor: IGBT, Technology: BiMOSFET™; FRED, Collector-emitter voltage: 1.7kV, Collector current: 42A, Power dissipation: 360W, Case: D3PAK, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mounting: SMD, Gate charge: 188nC, Kind of package: tube, Turn-on time: 224ns, Turn-off time: 1.07µs, Features of semiconductor devices: high voltage, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBT42N170
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IXBT42N170 Produktcode: 37260 |
 Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
||
 |
IXBT42N170 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: D3PAK Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXBT42N170 | Hersteller : IXYS |
Description: IGBT 1700V 80A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.32 µs Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A Supplier Device Package: TO-268AA Gate Charge: 188 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 300 A Power - Max: 360 W |
Produkt ist nicht verfügbar |
|
|
|
IXBT42N170 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: D3PAK Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |