IXDI602D2TR IXYS Integrated Circuits Division
Hersteller: IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8DFN
Supplier Device Package: 8-DFN-EP (5x4)
Input Type: Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.8V, 3V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 7.5ns, 6.5ns
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Technische Details IXDI602D2TR IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8DFN, Supplier Device Package: 8-DFN-EP (5x4), Input Type: Inverting, Voltage - Supply: 4.5V ~ 35V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 2A, 2A, Logic Voltage - VIL, VIH: 0.8V, 3V, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Low-Side, Channel Type: Independent, Rise / Fall Time (Typ): 7.5ns, 6.5ns.
Weitere Produktangebote IXDI602D2TR nach Preis ab 1.28 EUR bis 3.31 EUR
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IXDI602D2TR | IXYS Integrated Circuits Division |
Description: IC GATE DRVR LOW-SIDE 8DFN DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 2A, 2A Logic Voltage - VIL, VIH: 0.8V, 3V Gate Type: IGBT, N-Channel, P-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 7.5ns, 6.5ns Supplier Device Package: 8-DFN-EP (5x4) Input Type: Inverting Voltage - Supply: 4.5V ~ 35V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2790 Stücke: Lieferzeit 10-14 Tag (e) |
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IXDI602D2TR | IXYS Integrated Circuits |
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
auf Bestellung 1719 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXDI602D2TR |
|
Hersteller: IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8DFN
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.8V, 3V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Supplier Device Package: 8-DFN-EP (5x4)
Input Type: Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC GATE DRVR LOW-SIDE 8DFN
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.8V, 3V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Supplier Device Package: 8-DFN-EP (5x4)
Input Type: Inverting
Voltage - Supply: 4.5V ~ 35V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 10+ | 2.37 EUR |
| 25+ | 2.23 EUR |
| 100+ | 1.9 EUR |
| 250+ | 1.79 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.3 EUR |
| IXDI602D2TR |
|
Hersteller: IXYS Integrated Circuits
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET
auf Bestellung 1719 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.31 EUR |
| 10+ | 2.53 EUR |
| 25+ | 2.22 EUR |
| 100+ | 1.78 EUR |
| 250+ | 1.53 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.28 EUR |