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Technische Details IXFH52N30Q IXYS
Description: MOSFET N-CH 300V 52A TO247AD, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4V @ 4mA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs.
Weitere Produktangebote IXFH52N30Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| IXFH52N30Q |
 MOSFET N-Channel, 300V, 52A, TO-247AD Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXFH52N30Q | Hersteller : IXYS |
Description: MOSFET N-CH 300V 52A TO247AD Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 4V @ 4mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs |
Produkt ist nicht verfügbar |