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IXFH69N30P

IXFH69N30P IXYS


media-3319402.pdf
Hersteller: IXYS
MOSFET 69 Amps 300V 0.049 Rds
auf Bestellung 291 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.99 EUR
10+15.86 EUR
30+15.61 EUR
60+15.15 EUR
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Technische Details IXFH69N30P IXYS

Description: MOSFET N-CH 300V 69A TO247AD, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 69A (Tc).

Weitere Produktangebote IXFH69N30P nach Preis ab 14.66 EUR bis 18.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFH69N30P IXFH69N30P Hersteller : IXYS media?resourcetype=datasheets&itemid=0D688BE9-5010-42E7-950F-B665084A20BE&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-69N30P-Datasheet.PDF Description: MOSFET N-CH 300V 69A TO247AD
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.11 EUR
30+14.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH