IXFH96N20P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 145nC
| Anzahl | Preis |
|---|---|
| 7+ | 10.27 EUR |
| 8+ | 8.95 EUR |
| 10+ | 8.18 EUR |
| 20+ | 7.51 EUR |
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Technische Details IXFH96N20P IXYS
Description: MOSFET N-CH 200V 96A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFH96N20P nach Preis ab 9.28 EUR bis 15.77 EUR
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IXFH96N20P | Hersteller : IXYS |
MOSFETs 96 Amps 200V 0.024 Rds |
auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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