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Technische Details IXFK150N30X3 IXYS
Description: MOSFET N-CH 300V 150A TO264, Part Status: Active, Supplier Device Package: TO-264, Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote IXFK150N30X3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFK150N30X3 | Littelfuse Inc. |
Description: MOSFET N-CH 300V 150A TO264 Part Status: Active Supplier Device Package: TO-264 Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFK150N30X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264 Mounting: THT Power dissipation: 890W Gate charge: 254nC Polarisation: unipolar Technology: HiPerFET™; X3-Class Drain current: 150A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 8.3mΩ Reverse recovery time: 167ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFK150N30X3 |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 150A TO264
Part Status: Active
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 300V 150A TO264
Part Status: Active
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK150N30X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH