Technische Details IXFK180N10 IXYS
Description: MOSFET N-CH 100V 180A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V, Packaging: Tube, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 560W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA.
Weitere Produktangebote IXFK180N10
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| IXFK180N10 |
 TO-264 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXFK180N10 | Hersteller : IXYS |
Description: MOSFET N-CH 100V 180A TO264AA Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V Packaging: Tube Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA |
Produkt ist nicht verfügbar |
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IXFK180N10 | Hersteller : IXYS |
MOSFETs 100V 180A |
Produkt ist nicht verfügbar |