| Anzahl | Privatkunde |
|---|---|
| 4+ | 49.68 EUR |
| 10+ | 43.84 EUR |
| 25+ | 41.77 EUR |
| 50+ | 39.76 EUR |
| 100+ | 33.69 EUR |
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Technische Details IXFK20N120P Littelfuse
Description: MOSFET N-CH 1200V 20A TO264AA, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 780W (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel.
Weitere Produktangebote IXFK20N120P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFK20N120P | IXYS |
 Description: MOSFET N-CH 1200V 20A TO264AATechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFK20N120P | IXYS |
MOSFETs 20 Amps 1200V 1 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFK20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: TO264 On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFK20N120P |
|
Hersteller: IXYS
Description: MOSFET N-CH 1200V 20A TO264AA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 1200V 20A TO264AA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK20N120P |
|
Hersteller: IXYS
MOSFETs 20 Amps 1200V 1 Rds
MOSFETs 20 Amps 1200V 1 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFK20N120P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH