IXFK20N120P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1200V 20A TO264AA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
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Technische Details IXFK20N120P IXYS
Description: MOSFET N-CH 1200V 20A TO264AA, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 780W (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel.
Weitere Produktangebote IXFK20N120P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXFK20N120P | Hersteller : IXYS |
MOSFETs 20 Amps 1200V 1 Rds |
Produkt ist nicht verfügbar |

