Technische Details IXFK24N100 IX
Description: MOSFET N-CH 1KV 24A TO-264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V.
Weitere Produktangebote IXFK24N100
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXFK24N100 | Hersteller : IXYS |
 08+ SOP |
auf Bestellung 265 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
IXFK24N100 | Hersteller : Ixys Corporation |
Trans MOSFET N-CH Si 1KV 24A 3-Pin(3+Tab) TO-264AA |
Produkt ist nicht verfügbar |
|
 |
IXFK24N100 | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 1KV 24A 3-Pin(3+Tab) TO-264AA |
Produkt ist nicht verfügbar |
|
 |
IXFK24N100 | Hersteller : IXYS |
Description: MOSFET N-CH 1KV 24A TO-264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
IXFK24N100 | Hersteller : IXYS |
MOSFETs 1KV 24A |
Produkt ist nicht verfügbar |