Produkte > IXYS > IXFK24N90Q
IXFK24N90Q

IXFK24N90Q IXYS



Hersteller: IXYS
Description: MOSFET N-CH 900V 24A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFK24N90Q IXYS

Description: MOSFET N-CH 900V 24A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.

Weitere Produktangebote IXFK24N90Q

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFK24N90Q IXFK24N90Q Hersteller : IXYS ixys_98679.pdf MOSFETs 24 Amps 900V 0.45 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH