IXFK250N10P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 250A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.01 EUR |
| 25+ | 30.68 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details IXFK250N10P Littelfuse Inc.
Description: MOSFET N-CH 100V 250A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V.
Weitere Produktangebote IXFK250N10P nach Preis ab 37.87 EUR bis 54.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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IXFK250N10P | IXYS |
 MOSFETs Polar Power MOSFET HiPerFET |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK250N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264 Power dissipation: 1.25kW Gate charge: 205nC Polarisation: unipolar Drain current: 250A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 6.5mΩ Mounting: THT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFK250N10P |
|
Hersteller: IXYS
MOSFETs Polar Power MOSFET HiPerFET
MOSFETs Polar Power MOSFET HiPerFET
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 54.73 EUR |
| 10+ | 37.87 EUR |
| IXFK250N10P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Power dissipation: 1.25kW
Gate charge: 205nC
Polarisation: unipolar
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 6.5mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Power dissipation: 1.25kW
Gate charge: 205nC
Polarisation: unipolar
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 6.5mΩ
Mounting: THT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)