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Technische Details IXFK26N120P IXYS
Description: MOSFET N-CH 1200V 26A TO264AA, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 960W (Tc), Rds On (Max) @ Id, Vgs: 460mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Weitere Produktangebote IXFK26N120P
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IXFK26N120P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1200V 26A TO264AAInput Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264AA (IXFK) Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
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