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IXFK27N80 IXYS


littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80_datasheet.pdf.pdf Hersteller: IXYS
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Technische Details IXFK27N80 IXYS

Description: MOSFET N-CH 800V 27A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V.

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IXFK27N80 IXFK27N80 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 27A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
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IXFK27N80 IXFK27N80 Hersteller : IXYS media-3320129.pdf MOSFETs 800V 27A
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