IXFK44N50
Hersteller: auf Bestellung 4900 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details IXFK44N50
Description: MOSFET N-CH 500V 44A TO-264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V.
Weitere Produktangebote IXFK44N50
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IXFK44N50 Produktcode: 36560
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Transistoren > MOSFET N-CH |
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IXFK44N50 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 44A TO-264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
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IXFK44N50 | Hersteller : IXYS |
MOSFETs 500V 44A |
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IXFK44N50 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 520W; TO264; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
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