Weitere Produktangebote IXFK80N50P nach Preis ab 23.45 EUR bis 51.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFK80N50P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO264 Kind of package: tube Drain-source voltage: 500V Drain current: 80A Gate charge: 197nC On-state resistance: 65mΩ Power dissipation: 1.04kW Polarisation: unipolar |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK80N50P | IXYS |
MOSFETs 500V 80A |
auf Bestellung 388 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK80N50P | IXYS |
Description: MOSFET N-CH 500V 80A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V |
auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFK80N50P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 500V
Drain current: 80A
Gate charge: 197nC
On-state resistance: 65mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 500V
Drain current: 80A
Gate charge: 197nC
On-state resistance: 65mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 24.18 EUR |
| 10+ | 23.45 EUR |
| IXFK80N50P |
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Hersteller: IXYS
MOSFETs 500V 80A
MOSFETs 500V 80A
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.05 EUR |
| 10+ | 34.28 EUR |
| IXFK80N50P |
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Hersteller: IXYS
Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 51.02 EUR |
| 25+ | 33.44 EUR |
| 100+ | 29.27 EUR |