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IXFK88N20Q

IXFK88N20Q IXYS


Hersteller: IXYS
Description: MOSFET N-CH 200V 88A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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Technische Details IXFK88N20Q IXYS

Description: MOSFET N-CH 200V 88A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V.

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IXFK88N20Q IXFK88N20Q Hersteller : IXYS ixys_98969-1170300.pdf MOSFET 88 Amps 200V 0.028W Rds
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