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IXFM10N90 IXYS



Hersteller: IXYS
Description: MOSFET N-CH 900V 10A TO204AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-204AA
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-204AA, TO-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
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Technische Details IXFM10N90 IXYS

Description: MOSFET N-CH 900V 10A TO204AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-204AA, Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: TO-204AA, TO-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V.

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IXFM10N90 IXFM10N90 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N-Channel_HiPerFETs_IX-1547637.pdf MOSFET
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