Technische Details IXFN150N10 IXYS
Description: MOSFET N-CH 100V 150A SOT-227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V.
Weitere Produktangebote IXFN150N10
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXFN150N10 | Hersteller : IXYS |
 07+; |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| IXFN150N10 | Hersteller : IXYS |
MODULE |
auf Bestellung 87 Stücke: Lieferzeit 21-28 Tag (e) |
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IXFN150N10 | Hersteller : IXYS |
Description: MOSFET N-CH 100V 150A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: SOT-227B Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN150N10 | Hersteller : IXYS |
Discrete Semiconductor Modules 150 Amps 100V |
Produkt ist nicht verfügbar |