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Technische Details IXFN150N15 IXYS
Description: MOSFET N-CH 150V 150A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote IXFN150N15
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IXFN150N15 | Hersteller : IXYS |
Description: MOSFET N-CH 150V 150A SOT227B Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
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